In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ω⋅mm and a low contact resistivity of 1.1×10 -7 Ω⋅cm 2 . The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line (BEOL) CMOS application.

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The first thin films of novel semiconductor Cu3AsS4 are synthesized through solution-based methods and display promise for photovoltaic applications.

received his B.S. in Biomedical Engineering at Ohio State University (2011) where he studied the toxicity of various chemical compounds on hepatocytic cells. Matthew then joined the research groups of Dr. Jeffrey Youngblood and Dr. John Howarter at Purdue University in 2015 where he specialized in building a more robust understanding of sustainability in plastics through considering the full lifecycle of a product. For his work at Purdue, Matthew was awarded the NSF IGERT Fellowship (2016) and the NSF GRFP Fellowship (2017-2020). Matthew will receive his Ph.D. in Materials Engineering in May of 2020.