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This paper presents the realization of a phenomenal Q-value increment as high as 122% for 4 nH spiral inductors on a silicon substrate. The loss mechanisms of parasitic effects on the Q-factor have been studied to improve Q design. The dramatic improvement in the Q value resulted from optimizing the doping level and film thickness of a poly shield layer combined with proton implantation. The shielding effect of poly-silicon and the semi-insulating characteristics of a proton-bombarded substrate have added 37% and 58% increments to the Q value of the inductors, respectively. The combination of the two methods has multiplied their individual contributions rather than just adding them. The technique proposed in this work shall become a critical measure for putting inductors on silicon substrates with superior performance for silicon-based radio frequency integrated circuit (RFIC) applications.

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