First-principles molecular-dynamics calculations have been used to calculate the formation energy of the lowest-energy As interstitial configuration relative to the formation energies of As antisites and Ga vacancies in As-rich GaAs, and to identify and study the properties of energetically favorable complexes containing one As antisite and one As interstitial. It is suggested that the electronic and optical properties of the antisiteinterstitial complexes match the properties of the defects responsible for the dominant donor band in some samples grown around 350°C.

Convergence of density-functional supercell calculations for defect formation energies, charge transition levels, localized defect state properties, and defect atomic structure and relaxation is investigated using the arsenic split interstitial in GaAs as an example. Supercells containing up to 217 atoms and a variety of k-space sampling schemes are considered. It is shown that a good description of the localized defect state dispersion and charge state transition levels requires at least a 217-atom supercell, although the defect structure and atomic relaxations can be well converged in a 65-atom cell. Formation energies are calculated for the As split interstitial, Ga vacancy, and As antisite defects in GaAs, taking into account the dependence upon chemical potential and Fermi energy. It is found that equilibrium concentrations of As interstitials will be much lower than equilibrium concentrations of As antisites in As-rich, n-type or semi-insulating GaAs.

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We study negative thermal expansion (NTE) in model lattices with multiple atoms per cell and first-and second-nearest neighbor interactions using the (anharmonic) Morse potential. By exploring the phase space of neighbor distances and thermal expansion rates of the bonds, we determine the conditions under which NTE emerges. By permitting all bond lengths to expand at different rates, we find that NTE is possible without appealing to fully rigid units. Nearly constant, large-amplitude, isotropic NTE is observed up to the melting temperature in a classical molecular dynamics model of a ReO 3 -like structure when the rigidity of octahedral units is almost completely eliminated. Only weak NTE, changing over to positive expansion is observed when the corner-linked octahedra are rigid, with flexible second-neighbor bonds between neighboring octahedra permitting easy rotation. We observe similar changes to thermal expansion behavior for the diamond lattice: NTE when second-neighbor interactions are weak to positive thermal expansion when second-neighbor interactions are strong. From these observations, we suggest that the only essential local conditions for NTE are atoms with low coordination numbers along with very low energies for changing bond angles relative to bond-stretching energies. 65.40.De

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