We propose a three-dimensional (3D) imaging technique that can sense a 3D scene and computationally reconstruct it as a 3D volumetric image. Sensing of the 3D scene is carried out by obtaining elemental images optically using a pickup microlens array and a detector array. Reconstruction of volume pixels of the scene is accomplished by computationally simulating optical reconstruction according to ray optics. The entire pixels of the recorded elemental images contribute to volumetric reconstruction of the 3D scene. Image display planes at arbitrary distances from the display microlens array are computed and reconstructed by back propagating the elemental images through a computer synthesized pinhole array based on ray optics. We present experimental results of 3D image sensing and volume pixel reconstruction to test and verify the performance of the algorithm and the imaging system. The volume pixel values can be used for 3D image surface reconstruction.

We propose the use of synchronously moving micro-optics (lenslet arrays) for image pickup and display in three-dimensional integral imaging to overcome the upper resolution limit imposed by the Nyquist sampling theorem. With the proposed technique, we show experimentally that the viewing resolution can be improved without reducing the three-dimensional viewing aspect of the reconstructed image.

We propose synthetic aperture integral imaging, in which an effectively enlarged aperture (or field of view) is obtained by movement of small integral imaging system. This system substantially increases the field of view and the viewing resolution. The feasibility of our approach is experimentally demonstrated. To the best of our knowledge, this is the first time the synthetic aperture technique has been applied to three-dimensional integral imaging.

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We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 1012 Jones. In addition, to harness the electrostatic gate bias, V oc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.