The photovoltaic performances of i- ZnO/CdS/Cu(In,Ga)Se 2 (CIGS) solar cell with different window architectures of SnO 2 :In 2 O 3 (ITO), Al 2 O 3 :ZnO (AZO) and ITO/AZO, were experimentally compared. The solar cell with ITO deposited directly on i-ZnO layer showed an abnormal current-voltage characteristic as having a shunt path. Both of AZO and ITO/AZO resulted in normal current-voltage behavior as far as AZO is contacting ZnO.
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