The design of photoresists for 193nm exposure systems has received extensive attention, with variable lithographic processes based on single layer resist [1,2] as well as bi-layer [3] and top surface imaging [4] resists already been developed. Single layer resist systems can generally be divided into two classes: alicyclic and acrylic based on the polymer backbone. In acrylic systems, etching resistance is achieved by attaching pendant groups that have low Ohnishi numbers [5]. In alicyclic systems, the high etching resistant substituent is directly incorporated into the backbone. Excellent ArF single layer photoresists have been derived from both types of polymers in several investigations. [1,2,6,71 This work report on terpolymers of maleic anhydride, t-butyl-5-norbornene-2-carboxylate and polycyclic methacrylate derivatives as a resin for ArF photoresists formulated. Using these terpolymers which have a compatiable property for 2.38 wt% TMAH developer. The effects ofterpolymers, type of PAG, dissolution inhibitors, base component, baking temperature and time delay on ArF SLR are also investigated.
One of the major components of a photoresist formulation is polymer resin. Well-defined diblock and random copolymer of tert-butyl acrylate (tBA) and 4-acetoxystyrene (StyOAc), as well as triblock and random tertpolymer of tBA, StyOAc, and Sty were prepared by reversible addition fragmentation chain transfer polymerization (RAFT) process. The polymers all possess M w about ten thousand and PDI less than 1.23. After hydrolysis under basic condition, the hydroxystyrene (StyOH) analogs are obtained and then are formulated as photoresist. Lithographic evaluation under KrF excimer laser shows that random copolymer based photoresist exhibits better S/L patterns according to SEM images. However, the lithographic performance of the terpolymer based resists is similar.
This work describes several novel Si-containing polymers with low optical densities at 193nm and acid labile protecting groups. These materials are evaluated at 193nm lithography as one of the top surface imaging techniques to enhance lithography performance. Additionally, norbornene/maleic anhydride copolymers containing silicon side chains are synthesized. Experimental results indicate that the unexposed and exposed regions differ in terms of silicon content to the extent that patterns are formed using oxygen reactive ion etching. Moreover, a polymer with at least 3.5% wt of Si content can provide effective etch resistance in this study. 0.11 µm line/space patterns are also obtained using conventional developer with an ArF excimer laser stepper.
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