Although various two-dimensional (2D) materials hold great promise in next generation electronic devices, there are many challenges to overcome to be used in practical applications. One of them is the substrate effect, which directly affects the device performance. The large interfacial area and interaction between 2D materials and substrate significantly deteriorate the device performance. Several top-down approaches have been suggested to solve the problem. Unfortunately, however, they have some drawbacks such as a complicated fabrication process, a high production cost, or a poor mechanical property. Here, we suggest the partially suspended 2D materials-based field-effect transistors (FETs) by introducing block copolymer (BCP) lithography to fabricate the substrate effect-free 2D electronic devices. A wide range of nanometer size holes (diameter = 31~43 nm) is successfully realized with a BCP self-assembly nanopatterning process. With this approach, the interaction mechanism between active 2D materials and substrate is elucidated by precisely measuring the device performance at varied feature size. Our strategy can be widely applied to fabricate 2D materials-based high performance electronic, optoelectronic, and energy devices using a versatile self-assembly nanopatterning process.
Metallic nanoparticle ensemble, with narrow inter-particle distance, is a useful element for diverse optical devices due to highly enhanced electric field intensity at the gap. Self-assembly of block copolymer (BCP) can provide the versatile solution to fabricate precise nanostructures, but this methodology has the intrinsic limitation to realize optically coupled metallic multimer geometry with narrow inter-particle distance. This is because BCP-based nanotemplate possesses a minimum size limit for interparticle distance imposed by its thermodynamic restriction. Herein, we investigate the facile formation of metallic multimer with scalability and area-selectivity through the collapse of self-assembled BCP nanopattern. The capillary-force-induced collapse phenomenon enables a spatial transformation of lateral regular ordering in metallic nanoparticle array and enhances electric field intensity. The fabrication of this metallic nanoparticle ensemble from BCP lithography is successfully utilized for surface enhanced Raman scattering (SERS). The enhancement factor of metal nanoparticle multimer is calculated as ~6.74 × 105 at 1000 cm−1, 2.04 × 106 at 1022 cm−1, and 6.11 × 106 at 1580 cm−1, respectively.
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