The initial growth mode of indium tin oxide (ITO) on polycarbonate (PC) substrates was investigated. Some of the PC substrates were bombarded by 1-keV Ar ions in an oxygen environment to modify the substrate surface before ITO sputter deposition. The initial part of the film growth was transformed from a three-dimensional island growth to a two-dimensional like growth as a result of the surface treatment. The change of the growth mode was attributed to oxygen-bound functional groups newly formed on the PC surface. Models based on thermodynamic theory and on atomic kinetic approach are presented to explain the transition, respectively.

Films of indium-tin oxide (ITO) were deposited by ion-beam sputtering. Two types of seed layers of ITO were deposited prior to bulk-layer deposition. The types of seed layers were determined by ion species, namely, either pure Ar+ or a mixture of Ar+ and O2+. The microstructure and the preferred orientation of the bulk films mimicked those of the seed layer. Films with larger grains were obtained when the seed layer was used. The electron mobility did not depend on the type of microstructure. The ability to control the microstructure without sacrificing the electrical conductivity was demonstrated.