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As impurities are virtually impossible to exclude from Pu oxides in realistic environments, understanding the roles of impurities is crucial for the applications and designs of Pu oxides. Here we perform a systematic first-principles DFT + U calculation to find the trends of transition-metal (TM) behaviors in PuO2 in terms of energetics, atomic properties, oxidation states, and electronic structures. The results show that group IV-B elements Ti, Zr, and Hf are energetically and electronically favorable in PuO2 and render the possibilities of forming Pu-TM-O ternary phases. In contrast, the remaining TMs tend to destabilize PuO2 and whether phase segregation or transition occurs largely depends on the redox conditions: oxidation one induces segregation, whereas reduction one facilitates the transition from PuO2 to Pu2O3. On the basis of the correlations between the properties of TMs and their relative stabilities in PuO2, we conclude that the degree of electron match between TMs and Pu plays the decisive role in the stability, as established for the cases of tetravalent elements, whereas some electron-mismatched but energetically stable TMs such as III-B and V-B elements could drive the valence transition of Pu, resulting in the phase instability of PuO2.

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MAX phase materials have attracted increased attention due to their unique combination of ceramic and metallic properties. In this study, the properties of vacancies in Ti3AlC2 and Ti3SiC2, which are two of the most widely studied MAX phases, were investigated using first-principles calculations. Our calculations indicate that the stabilities of vacancies in Ti3SiC2 and Ti3AlC2 differ greatly from those previously reported for Cr2AlC. The order of the formation energies of vacancies is VTi(a) > VTi(b) > VC > VA for both Ti3SiC2 and Ti3AlC2. Although the diffusion barriers for Ti3SiC2 and Ti3AlC2 are similar (~0.95 eV), the properties of their vacancies are significantly different. Our results show that the vacancy–vacancy interaction is attractive in Ti3AlC2 but repulsive in Ti3SiC2. The introduction of VTi and VC vacancies results in the lattice constant c along the [0001] direction increasing for both Ti3SiC2 and Ti3AlC2. In contrast, the lattice constant c decreases significantly when VA are introduced. The different effect of VA on the lattice constants is explained by enhanced interactions of nearby Ti layers.

Metallic multilayered nanofilms have been extensively studied owing to their unique physical properties and applications. However, studies on the thermal conductivity and electrical resistivity of metallic multilayered nanofilms, as their important physical properties, are seldom reported. In this work, Cu/W multilayered nanofilms with periodic thickness varying from 6 to 150 nm were deposited by magnetron sputtering. The resistivities of the Cu/W multilayered nanofilms increase with the decrease of periodic thickness, especially when the periodic thickness is smaller than 37 nm. The resistivities of the multilayered nanofilms fit well with the Fuchs–Sondheimer and Mayadas–Shatzkes (FS–MS) model, which considers both interface scattering and grain boundary scattering. The thermal conductivities of the Cu/W multilayered nanofilms were measured by the three-omega (3ω) method, which decrease with a decrease of periodic thickness initially and increase at the smallest periodic thickness of 6 nm. The Boltzmann transport equation (BTE)-based model was used, to explain the periodic thickness-dependent thermal conductivity of metallic multilayered nanofilms by considering the contributions from both phonon and electron heat transport processes, where the calculated thermal conductivities agree well with the measured ones. The electrical resistivity and thermal conductivity strongly depend on the microstructures of the multilayered nanofilms.