We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and extremely robust, despite it being merely interfaciallyinduced, with neither graphene nor the TMD substrates changing their structure. This is found to be the case irrespective of the TMD material used, of the transport regime, of the carrier type in the graphene band, and of the thickness of the graphene multilayer. Specifically, we perform weak antilocalization (WAL) measurements as the simplest and most general diagnostic of SOI, and show that the spin relaxation time is very short (approximately 0.2 ps or less) in all cases regardless of the elastic scattering time, whose value varies over nearly two orders of magnitude. Such a short spin-relaxation time strongly suggests that the SOI originates from a modification of graphene band structure. We confirmed this expectation by measuring a gate-dependent beating, and a corresponding frequency splitting, in the low-field Shubnikov-de Haas magneto-resistance oscillations in high quality bilayer graphene devices on WSe2. These measurements provide an unambiguous diagnostic of a SOI-induced splitting in the electronic band structure, and their analysis allows us to determine the SOI coupling constants for the Rashba term and the so-called spin-valley coupling term, i.e., the terms that were recently predicted theoretically for interface-induced SOI in graphene. The magnitude of the SOI splitting is found to be on the order of 10 meV, more than 100 times greater than the SOI intrinsic to graphene. Both the band character of the interfacially induced SOI, as well as its robustness and large magnitude make graphene-on-TMD a promising system to realize and explore a variety of spin-dependent transport phenomena, such as, in particular, spin-Hall and valley-Hall topological insulating states.

Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter [1, 2]. Famously, SOC was predicted by Kane and Mele[3] to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene [4][5][6][7] has precluded experimental observation. Here, we exploit a layer-selective proximity effect-achieved via van der Waals contact to a semiconducting transition metal dichalcogenide[8-21]-to engineer Kane-Mele SOC in ultra-clean bilayer graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct incompressible, gapped phase at charge neutrality. The experimental data agrees quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time reversal invariant topological insulator, despite being separated from conventional band insulators by electric field tuned phase transitions where crystal symmetry mandates that the bulk gap must close [22]. Electrical transport measurements, conspicuously, reveal that the inverted phase has a conductivity ∼ e 2 /h, which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inversted phase, that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures. arXiv:1901.01332v2 [cond-mat.mes-hall]

Spin-orbit interaction (SOI) that is gate-tunable over a broad range is essential to exploiting novel spin phenomena. Achieving this regime has remained elusive because of the weakness of the underlying relativistic coupling and lack of its tunability in solids. Here we outline a general strategy that enables exceptionally high tunability of SOI through creating a which-layer spin-orbit field inhomogeneity in graphene multilayers. An external transverse electric field is applied to shift carriers between the layers with strong and weak SOI. Because graphene layers are separated by subnanometer scales, exceptionally high tunability of SOI can be achieved through a minute carrier displacement. A detailed analysis of the experimentally relevant case of bilayer graphene on a semiconducting transition metal dichalchogenide substrate is presented. In this system, a complete tunability of SOI amounting to its ON/OFF switching can be achieved. New opportunities for spin control are exemplified with electrically driven spin resonance and topological phases with different quantized intrinsic valley Hall conductivities.

We study the appearance of a sharp collective mode which features transverse current fluctuations within the bosonization approach to interacting two-dimensional Fermi liquids. This mode is analogous to the shear sound modes in elastic media, and, unlike the conventional zero sound mode, it is damped in weakly interacting Fermi liquids and only separates away from the particle-hole continuum when the quasiparticle mass becomes twice the transport mass m * 2m. The shear sound should be present in a large class of interacting charged and neutral Fermi liquids especially those proximate to critical points where the quasiparticle mass diverges. In metals this mode remains linearly dispersing in the presence of the long-ranged Coulomb force, unlike the conventional zero sound mode which becomes the plasma mode. We also detail a quick path between bosonization and classical Landau's Fermi liquid theory by constructing a mapping between the solutions of the classical kinetic equation and the quantized bosonic eigenmodes. By further mapping the kinetic equation into a 1D tight-binding model we solve for the entire spectrum of collective and incoherent particle-hole excitations of Fermi liquids with non-zero F0 and F1 Landau parameters.

Bilayer graphene, in the presence of a one-sided spin-orbit interaction (SOI) induced by a suitably chosen substrate, is predicted to exhibit unconventional Quantum Hall states. The new states arise due to strong SOI-induced splittings of the eight zeroth Landau levels, which are strongly layerpolarized, residing fully or partially on one of the two graphene layers. In particular, an Ising SOI in the meV scale is sufficient to invert the Landau level order between the n = 0 and n = 1 orbital levels under moderately weak magnetic fields B 10 T. Furthermore, when the Ising field opposes the B field, the order of the spin-polarized levels can also be inverted. We show that, under these conditions, three different compensated electron-hole phases, with equal concentrations of electrons and holes, can occur at ν = 0 filling. The three phases have distinct edge conductivity values. One of the phases is especially interesting, since its edge conduction can be turned on and off by switching the sign of the interlayer bias.