A novel Al chemical vapor deposition (CVD) technique called “CVD Al reflow trench fill” was developed using methylpyrrolidine alane (MPA) as a precursor in a damascene structure. The new method is based on the changes in deposition properties of CVD Al with the MPA precursor depending on its under layer. Using this characteristic, we completely filled a 40 nm-spacing trench and confirmed robust electrical properties. These results were again verified by comparing the bit line property of the Al damascene scheme with those of the Al reactive ion etch (RIE) scheme and low resistivity W (LRW) damascene structures.

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This article proposes a new phase change memory– (PCM) based memory storage architecture with associated self-adaptive data filtering for various embedded devices to support energy efficiency as well as high computing power. In this approach, PCM-based memory storage can be used as working memory and mass storage layers simultaneously, and a self-adaptive data filtering module composed of small DRAM dual buffers was designed to improve unfavorable PCM features, such as asymmetric read/write access latencies and limited endurance and enhance spatial/temporal localities. In particular, the self-adaptive data filtering algorithm enhances data reusability by screening potentially high reusable data and predicting adequate lifetime of those data depending on current victim time decision value. We also propose the possibility that a small amount of DRAM buffer is embedded into mobile processors, keeping this as small as possible for cost effectiveness and energy efficiency. Experimental results show that by exploiting a small amount of DRAM space for dual buffers and using the self-adaptive filtering algorithm to manage them, the proposed system can reduce execution time by a factor of 1.9 compared to the unified conventional model with same the DRAM capacity and can be considered comparable to 1.5× DRAM capacity.

Current high-performance computer systems utilize a memory hierarchy of on-chip cache, main memory, and secondary storage due to differences in device characteristics. Limiting the amount of main memory causes page swap operations and duplicates data between the main memory and the storage device. The characteristics of next-generation memory, such as nonvolatility, byte addressability, and scaling to greater capacity, can be used to solve these problems. Simple replacement of secondary storage with new forms of nonvolatile memory in a traditional memory hierarchy still causes typical problems, such as memory bottleneck, page swaps, and write overhead. Thus, we suggest a single architecture that merges the main memory and secondary storage into a system called a Memory-Disk Integrated System (MDIS). The MDIS architecture is composed of a virtually decoupled NVRAM and a nonvolatile memory performance optimizer combining hardware and software to support this system. The virtually decoupled NVRAM module can support conventional main memory and disk storage operations logically without data duplication and can reduce write operations to the NVRAM. To increase the lifetime and optimize the performance of this NVRAM, another hardware module called a Nonvolatile Performance Optimizer (NVPO) is used that is composed of four small buffers. The NVPO exploits spatial and temporal characteristics of static/dynamic data based on program execution characteristics. Enhanced virtual memory management and address translation modules in the operating system can support these hardware components to achieve a seamless memory-storage environment. Our experimental results show that the proposed architecture can improve execution time by about 89% over a conventional DRAM main memory/HDD storage system, and 77% over a state-of-the-art PRAM main memory/HDD disk system with DRAM buffer. Also, the lifetime of the virtually decoupled NVRAM is estimated to be 40% longer than that of a traditional hierarchy based on the same device technology. ACM Reference Format:Do-Heon Lee, Su-Kyung Yoon, Jung-Geun Kim, Charles C. Weems, and Shin-Dug Kim. 2015. A new memorydisk integrated system with HW optimizer. ACM Trans.

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