Au/Ag bilayered metal mesh with arrays of nanoholes were devised as a catalyst for metal-assisted chemical etching of silicon. The present metal catalyst allows us not only to overcome drawbacks involved in conventional Ag-based etching processes, but also to fabricate extended arrays of silicon nanowires (SiNWs) with controlled dimension and density. We demonstrate that SiNWs with different morphologies and axial orientations can be prepared from silicon wafers of a given orientation by controlling the etching conditions. We explored a phenomenological model that explains the evolution of the morphology and axial crystal orientation of SiNWs within the framework of the reaction kinetics.

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Triboelectric charging involves frictional contact of two different materials, and their contact electrification usually relies on polarity difference in the triboelectric series. This limits the choices of materials for triboelectric contact pairs, hindering research and development of energy harvest devices utilizing triboelectric effect. A progressive approach to resolve this issue involves modification of chemical structures of materials for effectively engineering their triboelectric properties. Here, we describe a facile method to change triboelectric property of a polymeric surface via atomic-level chemical functionalizations using a series of halogens and amines, which allows a wide spectrum of triboelectric series over single material. Using this method, tunable triboelectric output power density is demonstrated in triboelectric generators. Furthermore, molecular-scale calculation using density functional theory unveils that electrons transferred through electrification are occupying the PET group rather than the surface functional group. The work introduced here would open the ability to tune triboelectric property of materials by chemical modification of surface and facilitate the development of energy harvesting devices and sensors exploiting triboelectric effect.

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.