Systematic effort was made to optimize the quality of ferroelectric Bi3.25La0.75Ti3O12 thin films, that were pulsed laser deposited onto indium–tin-oxide coated glass plates, by varying the conditions of laser fluence density, partial oxygen pressure and post-annealing temperature. Characterizations from the dielectric and ferroelectric measurements concluded that the films deposited with a laser power of 2.5 J cm−2, a deposition pressure of 200 mTorr and an annealing temperature of 650 °C showed the finest electrical properties, consisting of remnant polarization (2Pr) and coercive field (Ec) values of 28–32 µC cm−2 and 90–100 kV cm−1, respectively. No significant reduction in switching polarization magnitudes were observed until 1 × 1011 switching cycles, indicating that these electrical properties and the relevancy of the film with metallic-oxide ITO electrodes have satisfied the necessary requirements for applications in nonvolatile ferroelectric memory devices.