We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 passivation on device characteristics, measurements and analyses were conducted on thermally annealed devices before and after the passivation. More specifically, static and low-frequency noise analyses were used in monitoring the charge transport characteristics in the devices. The carrier number fluctuation (CNF) model, which is related to the charge trapping/detrapping process near the interface between the channel and gate dielectric, was employed to describe the current fluctuation phenomena. Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values D(it) and N(it), extracted from the subthreshold slope (SS) and the CNF model, respectively. The deviations between the interface trap density values extracted using the SS value and CNF model are elucidated in terms of the role of the Schottky barrier between the few-layer BP and metal contact. Furthermore, the preservation of the Al2O3-passivated few-layer BP flakes in ambient air for two months was confirmed by identical Raman spectra.

No abstract

We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensitivity of ∼107 at the gate voltage Vg=−40 V was obtained due to a small dark-current at the turn-off state of FET. The dynamic response of the photocurrent became faster for the higher mobility SnO2 NW FETs. We expect our aligned SnO2 NW FETs will be useful as polarized UV detectors with a high sensitivity.

The thermoelectric power (TEP) of single walled carbon nanotube (SWCNT) thin films in pure metallic SWCNT (m-SWCNT) and pure semiconducting SWCNT (s-SWCNT) networks as well as in m-and s-SWCNT mixtures is investigated. The TEP measured on the pure s-SWCNT film (≈88 μV/K) was found to be almost 7 times higher than that of the m-SWCNTs (≈13 μV/K). Moreover, a quasilinear increase of TEP of the mixed SWCNT networks was observed as the fraction of s-SWCNTs is increased. The experimentally determined relationship between TEP and the fraction of s-SWCNTs in the mixture allows fast and simple quantitative analysis of the s:m ratio in any as-prepared heterogeneous SWCNT network. Furthermore, a semiempirical model analyzing the effect of the intertube junctions is proposed and applied to describe the thermoelectric behavior of the prepared SWCNT networks. The results of calculations match well with the experimental data and clearly demonstrate that the measured TEP of thin SWCNT films is principally controlled by the intertube junctions. The fundamental role of junctions in generating thermoelectric power is not limited to only SWCNT networks as discovered here, but also could be applied to systems where nanoparticles/nanotube form percolating paths in thin films and composite materials.