A passive matrix (PM) blue Micro light‐emitting diode (LED) device with 300 μm pixel size and 7/10/15/20/30/50/100 μm luminous area is designed. The 1 μm thick insulating layer composed of SiO2 is grown in four steps, which improves the quality of the insulating layer and reduces the risk of electrical leakage. The thick metal is used as the p lines and the n lines. The non‐conductive GaN is left as the structure underneath the p lines to alleviate the breakage of the p lines to improve the reliability of the device. The optimized technology is used to fabricate the micro‐display, and the optical and electrical characterization is carried out. Besides, we realize the character display. With no additional manufacturing process, this work will contribute to the implementation of highly reliable PM Micro‐LED display technology.

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Based on transfer printing technology, Micro-LED pixels can be transferred to different types and sizes of driver substrates to realize the display of different application scenarios. To achieve a successful...