Doping of few layered 2H WS2 films with Nb by pulsed laser deposition (PLD) using ablation targets fabricated from WS2, S and Nb powders is reported. The undoped controls were n-type, exhibited a Hall mobility of 0.4 cm2/Vs, and characterized by a Fermi level at 1.41 eV from the valence band edge. The latter was determined using ultraviolet photoelectron spectroscopy. Films doped at 0.5 and 1.1 atomic percentages niobium were p-type, and characterized by Fermi levels at 0.31 eV and 0.18 eV from the valence band edge. X-ray photoelectron spectroscopy indicates that Nb substitutes on W lattice sites. With increased Nb doping, the hole sheet concentration increased from 3.9 × 1012 to 8.6 × 1013 cm−2, while the mobility decreased from 7.2 to 2.6 cm2/Vs, presumably due to increased ionized impurity scattering. The approach demonstrates the potential of PLD for controlled doping of transition metal dichalcogenides.