This paper examines the effects of mask printability of various OPC defect types on a MoSi APSM mask using an MSM-100 AIMS tool operating at 248nm as a printability prediction tool. Printability analysis will be used to address differences in intensity, image capture wavelength, defocus, defect size, type, and placement on two substrate materials. Defect correlation to photomask CD error, aerial image intensity error, and MEEF on high-end KrF photomasks will also be studied.

No abstract

Recently a new mask qualification concept is getting more and more attention. Mask makers are challenged to meet mask and defect specifications of 130 and 100-nm technology node. This means very tight specifications, which usually lead to long mask delivery times. A main factor in the mask making process is mask inspection and repair. The mask repair cycle is not only time-consuming, but also bears the danger of damaging a mask. At the same time, when investigating defect printability, it is getting clear that a lot of today detected defects do not affect wafer-printing results at all. The concept " Inspect allRepair only what prints" is introduced. In this paper a study comparing different defect classification methods and their impact on mask repair cycle time is presented.

No abstract