High brightness, high charge electron beams are critical for a number of advanced accelerator applications. The initial emittance of the electron beam, which is determined by the mean transverse energy (MTE) and laser spot size, is one of the most important parameters determining the beam quality. The bialkali photocathodes illuminated by a visible laser have the advantages of high quantum efficiency (QE) and low MTE. Furthermore, Superconducting Radio Frequency (SRF) guns can operate in the continuous wave (CW) mode at high accelerating gradients, e.g. with significant reduction of the laser spot size at the photocathode. Combining the bialkali photocathode with the SRF gun enables generation of high charge, high brightness, and possibly high average current electron beams. However, integrating the high QE semiconductor photocathode into the SRF guns has been challenging. In this article, we report on the development of bialkali photocathodes for successful operation in the SRF gun with months-long lifetime while delivering CW beams with nano-coulomb charge per bunch. This achievement opens a new era for high charge, high brightness CW electron beams.

GaAs photocathodes are the primary choice for generating spin-polarized electron beam with high brightness, high polarization, and fast polarization reversal. However, it suffers from short lifetime due to the highly reactive nature of the emission surface, resulting in substantial operational difficulties. Activating GaAs with a more robust material, such as Cs2Te, shows comparable polarization to that of Cs–O activation and increases the lifetime due to the robustness of the Cs2Te layer. However, previously reported photocathodes based on Cs–Te activation on GaAs suffer from 10× lower quantum efficiency (QE) compared to that activated with conventional Cs–O activation. Herein, we report activation recipes for GaAs photocathodes using Cs, O2, and Te. For Cs–Te activation, the QE was 6.6% at 532 nm. For Cs–O–Te activation, the QE was 8.8% at 532 nm and 4.5% at 780 nm. The negative electron affinity of the activated GaAs was directly measured and confirmed by low energy electron microscopy. We also report the activation layer chemical states and stoichiometry using in situ micro-spot synchrotron radiation x-ray photoelectron spectroscopy.

Charge lifetime of strained superlattice GaAs photocathodes in DC guns is limited by ion back bombardment. It needs to be improved at least an order of magnitude to meet the requirements for future colliders such as Electron-Ion Collider (EIC). In this work, we propose and present simulation results for an offset anode scheme to increase charge lifetime in DC guns. This scheme eliminates the bombardment of high energy ions on the cathode and enables maximum usage of the available cathode area. Depending on the size of the available cathode area, this method can increase the charge lifetime by an order of magnitude compared to the current best alternative method. An anode assembly capable of in-vacuum movement is required for this method, which has been designed and fabricated at Brookhaven National Laboratory.

No abstract

Alkali antimonide photocathodes have wide applications in free-electron lasers and electron cooling. The short lifetime of alkali antimonide photocathodes necessitates frequent replacement of the photocathodes during a beam operation. Furthermore, exposure to mediocre vacuum causes loss of photocathode quantum efficiency due to the chemical reaction with residual gas molecules. Theoretical analyses have shown that covering an alkali antimonide photocathode with a monolayer graphene or hexagonal boron nitride protects it in a coarse vacuum environment due to the inhibition of chemical reactions with residual gas molecules. Alkali antimonide photocathodes require an ultra-high vacuum environment, and depositing a monolayer 2D material on it poses a serious challenge. In the present work, we have incorporated a novel method known as intercalation, in which alkali atoms pass through the defects of a graphene thin film to create a photocathode material underneath. Initially, Sb was deposited on a Si substrate, and a monolayer graphene was transferred on top of the Sb film. Heat cleaning around 550–600 °C effectively removed the Sb oxides, leaving metallic Sb underneath the graphene layer. Depositing Cs on top of a monolayer graphene enabled the intercalation process. Atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy, low energy electron microscopy, and x-ray diffraction measurements were performed to evaluate photocathode formation underneath the monolayer graphene. Our analysis shows that Cs penetrated the graphene and reacted with Sb and formed Cs3Sb.