Abstract-This paper presents the modeling of embedded systems with SimBed, an execution-driven simulation testbed that measures the execution behavior and power consumption of embedded applications and RTOSs by executing them on an accurate architectural model of a microcontroller with simulated real-time stimuli. We briefly describe the simulation environment and present a study that compares three RTOSs: C/OS-II, a popular public-domain embedded real-time operating system; Echidna, a sophisticated, industrial-strength (commercial) RTOS; and NOS, a bare-bones multirate task scheduler reminiscent of typical "roll-your-own" RTOSs found in many commercial embedded systems. The microcontroller simulated in this study is the Motorola M-CORE processor: a low-power, 32-bit CPU core with 16-bit instructions, running at 20MHz. Our simulations show what happens when RTOSs are pushed beyond their limits and they depict situations in which unexpected interrupts or unaccounted-for task invocations disrupt timing, even when the CPU is lightly loaded. In general, there appears no clear winner in timing accuracy between preemptive systems and cooperative systems. The power-consumption measurements show that RTOS overhead is a factor of two to four higher than it needs to be, compared to the energy consumption of the minimal scheduler. In addition, poorly designed idle loops can cause the system to double its energy consumption-energy that could be saved by a simple hardware sleep mechanism.

As memory accesses become slower with respect to the processor and consume more power with increasing memory size, the focus of memory performance and power consumption has become increasingly important. With the trend to develop multi-threaded, multi-core processors, the demands on the memory system will continue to scale. However, determining the optimal memory system configuration is non-trivial. The memory system performance is sensitive to a large number of parameters. Each of these parameters take on a number of values and interact in fashions that make overall trends difficult to discern. A comparison of the memory system architectures becomes even harder when we add the dimensions of power consumption and manufacturing cost. Unfortunately, there is a lack of tools in the public-domain that support such studies. Therefore, we introduce DRAMsim, a detailed and highly-configurable C-based memory system simulator to fill this gap. DRAMsim implements detailed timing models for a variety of existing memories, including SDRAM, DDR, DDR2, DRDRAM and FB-DIMM, with the capability to easily vary their parameters. It also models the power consumption of SDRAM and its derivatives. It can be used as a standalone simulator or as part of a more comprehensive system-level model. We have successfully integrated DRAMsim into a variety of simulators including MASE [15], Sim-alpha [14], BOCHS[2] and GEMS[13]. The simulator can be downloaded from www.ece.umd.edu/dramsim.

This paper presents the modeling of embedded systems with SimBed, an execution-driven simulation testbed that measures the execution behavior and power consumption of embedded applications and RTOSs by executing them on an accurate architectural model of a microcontroller with simulated real-time stimuli. We briefly describe the simulation environment and present a study that compares three RTOSs: µC/OS-II, a popular public-domain embedded real-time operating system; Echidna, a sophisticated, industrial-strength (commercial) RTOS; and NOS, a bare-bones multi-rate task scheduler reminiscent of typical "roll-your-own" RTOSs found in many commercial embedded systems. The microcontroller simulated in this study is the Motorola M-CORE processor: a low-power, 32-bit CPU core with 16-bit instructions, running at 20MHz.

This paper presents the modeling of embedded systems with SimBed, an execution-driven simulation testbed that measures the execution behavior and power consumption of embedded applications and RTOSs by executing them on an accurate architectural model of a microcontroller with simulated real-time stimuli. We briefly describe the simulation environment and present a study that compares three RTOSs: µC/OS-II, a popular public-domain embedded real-time operating system; Echidna, a sophisticated, industrial-strength (commercial) RTOS; and NOS, a bare-bones multi-rate task scheduler reminiscent of typical "roll-your-own" RTOSs found in many commercial embedded systems. The microcontroller simulated in this study is the Motorola M-CORE processor: a low-power, 32-bit CPU core with 16-bit instructions, running at 20MHz. 203 2 obtained by either instrumenting code or using off-chip memory and a logic analyzer, but both schemes would change the system's execution time and energy consumption.

We report on the fabrication of device-quality AlN heterostructures grown on SiC for high-temperature electronic devices. The AlN films were grown by pulsed laser deposition (PLD) at substrate temperatures ranging from 25 °C (room temperature) to 1000 °C. The as-grown films were investigated using x-ray diffraction, Rutherford backscattering specttroscopy, ion channeling, atomic force microscopy, and transmission electron microscopy. The AlN films grown above 700 °C were highly c-axis oriented with rocking curve FWHM of 5 to 6 arc-min. The ion channeling minimum yields near the surface region for the AlN films were ∼2 to 4%, indicating their high degree of crystallinity. TEM studies indicated that AlN films were epitaxial and single crystalline in nature with a large number of stacking faults as a results of lattice mismatch and growth induced defects. The surface roughness for the films was about 0.5 nm, which is close to the unit cell height of the AlN. Epitaxial TiN ohmic contacts were also developed on SiC, GaN, and AlN by in-situ PLD. Epitaxial TiN/AlN/SiC MIS capacitors with gate areas of 4 * 10−4 cm2 were fabricated, and high-temperature current-voltage (I-V) characteristics were studied up to 450 °C. We have measured leakage current densities of low 10−8 A/cm2 at room temperature, and have mid 10−3 A/cm2 at 450°C under a field of 2 MV/cm.