The titanium-doped Ge2Sb2Te5 films were deposited on Si(100) substrates by comagnetron sputtering method. The titanium concentrations in those films were determined by x-ray photoelectron spectroscopy. The influence of Ti doping upon phase change characteristics of the samples has been investigated by x-ray diffraction and a temperature-regulable UVISEL™ typed spectroscopic ellipsometry. With the augmentation of Ti doping concentration, the crystalline temperatures of the films went up while annealing, and the face-centered-cubic phase of them had high thermal stability because of the bond making between Ti and Te elements partly.

A phase with high room-temperature coercivity has been synthesized in sputtered film samples of Sm-Fe-V. The samples of SmFeV and SmFeZr have been processed as was SmFeTi to first produce a high room-temperature coercivity of 38.5 kOe. The observed intrinsic coercivity iHc for Sm:Fe:V=19.6:73.5:6.9 atomic was 15.8 kOe at 293 K with a rise to 31 kOe at 6 K. The 4πM at 293 K for an applied field of 90 kOe was 6.2 kG. When this sample was cooled in an applied field of 90 kOe, the 4πM rose smoothly to 7.9 kG at 6 K. The x-ray patterns for SmFeV were similar to the high iHc Sm-Fe-Ti which we have reported. All the observed x-ray-diffraction lines can be fit to the large-cell 5-17 Nd-Fe binary structure. In contrast to this, the Sm-Fe-Zr phase at a similar composition showed a readily indexed x-ray pattern of TbCu7 type with a=5.109 Å and c=4.074 Å with no unaccounted lines. The Sm:Fe:Zr atomic composition was 19.9:72.0:8.1. The Sm-Fe-Zr 4πM at 18 kOe was 6.2 kG and the coercivity was 6.7 kOe as measured at 293 K. Values of iHc for SmFe(Ti,V) intermediate compositions of 46 kOe have been measured at 293 K.