This study demonstrates that plasma-enhanced chemical vapor deposition of copper films can be achieved in ambient air and at low temperature. A helium dielectric barrier discharge jet with a small mixture of hydrogen and copper(II) acetylacetonate vapor is utilized as the nonthermal plasma source to deposit conductive copper films with low electrical resistivity (<1 × 10 −7 Ω•m). The deposited film appears to have three distinct regions (reddish brown, dark blue, and yellowish) from center to edge. Copper nanograins (~50 nm) are observed in both the reddish-brown and the dark-blue regions, whereas the yellowish region exhibits a continuous structure containing copper oxide. The copper films are further deposited on various temperature-sensitive substrates, including plastic, cardboard, agar, and pork skin. K E Y W O R D S atmospheric-pressure nonthermal plasma jet, copper(II) acetylacetonate, dielectric barrier discharge, plasma-enhanced chemical vapor deposition, thin films

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