In this Technical Design Report (TDR) we describe the NEXT-100 detector that will search for neutrinoless double beta decay (β β 0ν) in 136 Xe at the Laboratorio Subterráneo de Canfranc (LSC), in Spain. The document formalizes the design presented in our Conceptual Design Report (CDR): an electroluminescence time projection chamber, with separate readout planes for calorimetry and tracking, located, respectively, behind cathode and anode. The detector is designed to hold a maximum of about 150 kg of xenon at 15 bar, or 100 kg at 10 bar. This option builds in the capability to increase the total isotope mass by 50% while keeping the operating pressure at a manageable level. The readout plane performing the energy measurement is composed of Hamamatsu R11410-10 photomultipliers, specially designed for operation in low-background, xenon-based detectors. Each individual PMT will be isolated from the gas by an individual, pressure resistant enclosure and will be coupled to the sensitive volume through a sapphire window. The tracking plane consists in an array of Hamamatsu S10362-11-050P MPPCs used as tracking pixels. They will be arranged in square boards holding 64 sensors (8 × 8) with a 1-cm pitch. The inner walls of the TPC, the sapphire windows and the boards holding the MPPCs will be coated with tetraphenyl butadiene (TPB), a wavelength shifter, to improve the light collection.

Silicon photomultipliers (SiPM) are the photon detectors chosen for the tracking readout in NEXT, a neutrinoless β β decay experiment which uses a high pressure gaseous xenon time projection chamber (TPC). The reconstruction of event track and topology in this gaseous detector is a key handle for background rejection. Among the commercially available sensors that can be used for tracking, SiPMs offer important advantages, mainly high gain, ruggedness, cost-effectiveness and radio-purity. Their main drawback, however, is their non sensitivity in the emission spectrum of the xenon scintillation (peak at 175 nm). This is overcome by coating these sensors with the organic wavelength shifter tetraphenyl butadiene (TPB). In this paper we describe the protocol developed for coating the SiPMs with TPB and the measurements performed for characterizing the coatings as well as the performance of the coated sensors in the UV-VUV range.

Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free β β 0ν experiment with xenon gas aimed by NEXT. The photon detection efficiency (PDE) of UV-enhanced SiPMs provided by Hamamatsu was determined for light in the range 250-500 nm. The PDE of standard SiPMs of the same model (S10362-33-50C), coated and non-coated with TPB, was also determined for comparison. In the UV range 250-350 nm, the PDE of the standard SiPM is shown to decrease strongly, down to about 3%. The UV-enhanced SiPM without window is shown to have the maximum PDE of 44% at 325 nm and 30% at 250 nm. The PDE of the UV-enhanced SiPM with silicon resin window has a similar trend in the UV range, although it is about 30% lower. The TPB-coated SiPM has shown to have about 6 times higher PDE than the non-coated SiPM in the range 250-315 nm. This is however below the performance of the UV-enhanced prototypes in the same wavelength range. Imaging in noble-gas detectors using UV-enhanced SiPMs is discussed.

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