No abstract

A 0.25-pm modular High-Engery Implanted BiCMOS (HEIBiC) technology has been developed for high-integration wireless-communication systems. It integrates an RF bipolar transistor into CMOS process [ l ] without disturbing CMOS device characteristics. HEIBiC technology utilizes implantation to form the base, collector and CMOS tubs. This single-poly emitter npn transistor demonstrates an fT=52 GHz for 2.5 V devices and an fTBVCEo product of 171 GHz-V for 3.3 V devices. The performance of HEIBiC technology is competitive with the best reported in the literature.