Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behavior and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime.

The effect of the electmn-elecnon (e-e) interaction on the charge-density wave (cow) of MX complexes is studied using the Cutzwiller variational method within the one-band model, and neglecting the quantum features of the lattice. It is found thal the effect of the e-e intemction on the m w in MX complexes is opposite to that on the BOW (bondader wave) in the conjugated polymer, although both the CDW and BOW have the same origin, which is the dimerization of the one-dimensional lanice. The CDW is suppressed by the ee interaction, and the BOW is initially enhanced. The physical reason for this c o n a t is analysed.