Articles you may be interested inOn resolving hot carrier induced degradation mechanisms in silicononsapphire metaloxidesemiconductor fieldeffect transistors Carrier mobility degradation in metaloxidesemiconductor fieldeffect transistors due to oxide charge Effect of oxide field on hotcarrierinduced degradation of metaloxidesemiconductor fieldeffect transistors Appl. Phys. Lett. 50, 1188Lett. 50, (1987; 10.1063/1.97906 Study of high electrical field induced degradation of channel response in metaloxidesemiconductor field effect transistors using an ac conductance technique

The kinetics of carrier trapping and breakdown in oxides of less than 5 nm was studied. It was found that electron trapping was negligible, but hole trapping was relatively high. An effective oxide trap density due to tunnel annealing was proposed. The rate equation of carrier trapping in the bulk oxide was presented in connection with the generated hole injection by anode surface plasmons. The voltage variation during a constant current test was analyzed using the hole trapping model and capacitance-voltage measured interface trap generation, and approximate values for the capture cross section and hole generation rate were extracted. The gate voltage shift rebounded after 30–100 C/cm2 electron fluence due to interface trap generation. In ultrathin oxides hole trapping causes breakdown, and that trapping is mainly developed in localized weak areas. Using the weak area breakdown model we found that the ratio of weak to robust area is about 5%.