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The irradlation damage in n+-Si/p+-Sil-xGex epitaxial diodes and n+-Si/p+-Si l-xGex/n-Si epitaxial heterojunction bipolar transistors (HBTs) by fast neutrons and MeV electrons is studied as a function of fluence and germanium content for the first time. The degradation of the electrical performance of both diodes and HBTs by irradlation increases with increasing fluence, whle it decreases with increasing germanium content. The damage coefficient of reverse current for x = 0.12 and 0.16 dlodes irradated by neutrons is calculated to be 6.2 x and 5.5 x n-lAcm2, respectively. That of h m for electron-irradated x = 0.08, 0.12 and 0.16 HBTs is 7.6 x and 1.6 x 1O-l6e-lcm2, respectively. x

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