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Gamma-ray spectra with energies up to 1.3 MeV have been detected for the first time with 1-cm-thick Hg12 semiconductor detectors at room temperature. The spectra can be taken using a "long," 10 vsec, or a llshort,ll 0.5 vsec, charge collection time. The latter has produced better results with better peak efficiency, higher peak-to-valley ratio, and fewer low energy counts with little sacrifice in resolution. Spectra for energies between 100 keV and 1.3 MeV and descriptions of the techniques for their acquisition are presented. The thick detectors need a conditioning treatment, which is described, prior to showing spectral response.-1.

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Single crystal sections of HgI2 (about 1 cm thick) have been evaluated for charge carrier transport properties. Using these thick detector structures, surface effects produced during fabrication are reduced, enhancing the bulk property characteristics. The standard time-of-flight method was used to determine electron and hole mobilities. Lifetime measurements for electrons and holes were made by direct observation of the carrier decay where crystal transit times were long compared to lifetimes. Nonlinear charge carrier velocities have been observed during mobility measurements. These nonlinearities impair a partial charge collection technique [1,2,3] for spectra generation taken with thick detectors while having a lesser effect on the standard full charge collection approach. Partial charge collection methods have produced greater peak efficiencies than full charge collection, and investigations of crystal properties are being used to enhance this method.