Adsorption of Group III metal ln nanostructures on Si surfaces is an exciting field that integrates the exotic electronic properties of the nano-phase and the p-doping abilities of In. We present here the kinetics of growth of In on (7 x 7) reconstructed Si(111) surface by experiments done in ultra high vacuum in the submonolayer regime, probed in-situ by surface sensitive techniques. Indium is observed to grow in the layer by layer mode. The study reveals adsorption behavior dictated by layer-dependent mobilities of In atoms that causes initial island formation that later wet the surface. However the desorption studies manifest the initial agglormeration of top layer atoms, which at higher temperatures overcome step-edge barriers and consequently two-dimensional layering of three-dimensional islands before sublimation occurs. Thus the study reveals the kinetic details of the anamolour behavior of the In/Si interface formation and desorption that can enable the tailor making of several nano-phases and structures of characteristic properties.

Nanocrystalline, monophasic, B-site isovalent substituted BaTiO3 with the representative formula, Ba(MxTi1−x)O3 [M = Sn, Zr] have been prepared by a simple direct-precipitation method. The crystalline phase and particle size of the nanopowders are examined by XRD and transmission electron microscopy, respectively. The influence of the isovalent substituent on the Curie temperature (Tc) and the nature of the phase transitions have been determined. The dielectric properties of the solid solutions prepared by this new method are reported. Factors influencing Tc in the solid-solution systems are also reported.