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In this paper we report experimental investigation of the in-plane thermoelectric properties of Si/Ge superlattices grown on silicon-on-insulator wafers. A two-wire 3ω method was employed to measure the in-plane thermal conductivity of the superlattice sample investigated. The in-plane Seebeck coefficient and electrical conductivity of the same sample are also measured. Experimental data are compared with the results of theoretical models of carrier transport based on carrier pocket engineering and partial diffuse phonon interface scattering.

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