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Polycrystalline CuIn 3 Se 5 photoabsorber thin films were deposited onto glass/ITO substrates by using the pulsed laser deposition (PLD) technique. Stoichiometric CuIn 3 Se 5 samples for PLD targets were synthesized in evacuated quartz ampoules by the vacuum melting of pure elements. The synthesized samples and deposited films were tested by using XRD analysis. The conditions of the PLD process were developed for the preparation of polycrystalline CuIn 3 Se 5 thin films of the same composition as a source target and with the thickness in the range 300-450 nm. The influence of thermal annealing on photovoltaic properties and morphology of as-deposited CuIn 3 Se 5 layers was investigated.

Thin films of Cu-In-Se (CISe) photoabsorber with an overall composition of CuIn 3 Se 5 were deposited onto glass/indium tin oxide (ITO) substrates from a polycrystalline bulk CuIn 3 Se 5 source using the high-vacuum evaporation technique. Thermal conditions for the substrates during the evaporation process and the subsequent annealing in vacuum were selected to prepare polycrystalline n-CuIn 3 Se 5 photoabsorber layers for use in hybrid photovoltaic structures based on an inorganic photoabsorber and conductive polymer functional layers. The CISe layers were deposited at a substrate temperature of 200°C and were annealed at temperatures from 300°C to 500°C in vacuum. Part of the as-deposited CISe was annealed twice, in argon and in vacuum at 500°C. These layers exhibited high photosensitivity and photoconductivity when illuminated with white light at an intensity of 100 mW/cm 2 . The results showed that the chalcopyrite structure of the prepared CISe photoabsorber films adhered well to the glass/ITO substrate. The average value of charge carrier concentration and the profile of charge carrier concentration in the annealed CISe photoabsorber layer were calculated using impedance spectroscopy.

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