Electrochemical and corrosion behaviors of TiNi-based shape memory thin films were explored using electrochemical impedance spectroscopy (EIS) and polarization methods in phosphate buffered saline (PBS) solutions at 37°C. Compared with those of electro-polished and passivated bulk NiTi shape memory alloys, the break-down potentials of the sputter-deposited amorphous TiNi films were much higher. After crystallization, the break-down potentials of the TiNi films were comparable with that of the bulk NiTi shape memory alloy. Additionally, variation of composition of the TiNi films showed little influence on their corrosion behaviour. The EIS data were fitted using a parallel resistance-capacitance circuit associated with passive oxide layer on the tested samples. The thickness of the oxide layer for the TiNi thin films was found much thinner than that of bulk NiTi shape memory alloy. During electrochemical testing, the oxide thickness of the bulk alloy reached its maximum at a voltage of 0.6~0.8 V, whereas those of TiNi films were increased continuously up to a voltage of 1.2 V.

Ni41.7Ti38.8Nb19.5 shape memory alloy films were sputter-deposited onto silicon substrates and annealed at various temperatures. A narrow thermal hysteresis was obtained in the Ni-Ti-Nb films with a grain size of less than 50 nm. The small grain size, which means an increase in the volume fraction of grain boundaries, facilitates the phase transformation and reduces the hysteresis. The corresponding less transformation friction and lower heat transfer during the shear process, as well as reduced spontaneous lattice distortion, are responsible for this reduction of the thermal hysteresis.

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