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Articles you may be interested inOnline system for temperature and accumulated dose control in plasma-based ion implantation Rev. Sci. Instrum. 78, 023905 (2007); 10.1063/1.2472601New line of high voltage high current pulse generators for plasma-based ion implantation Surface treatment of pure and alloyed aluminum using a new plasma-based ion implanter apparatus A new plasma-based ion implantation ͑PBII͒ facility consisting of a dedicated PBII chamber plus characterization equipment has been established at the Van de Graaff Group, National Accelerator Centre, Faure. The implantation unit has an aluminum vacuum chamber with a volume of 1 m 3 , and it incorporates conventional plasma generation capability for gas plasmas, such as a set of multifilaments. The implantation power supply is capable of delivering 30 kV, with a pulse duration of up to 1000 s, and a repetition rate of 1 kHz. This allows a maximum average load of 12 J to the target. The facility is being used at the outset for the fundamental study of plasmas, time-dependent x-ray generation during the implantation pulse, and plasma immersion implantation. The facility is supported by a 6 MV Van de Graaff accelerator equipped with the ion-beam analytical tools necessary for characterization of modified surfaces.

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