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The effect of load on the dry sliding wear behaviour of an Al-10si alloy reinforced with TiB2 particles reported in this paper. The coefficient of friction and wear rate of an Al-10Si alloy and composites were measured using a pin-on-disc apparatus. The wear rate of Al-10Si alloy increased drastically and that of composites decreased with the increase in weight percent of TiB2 particles. The load bearing capacity of the alloy during wear increases and the same for composites is decreasing with increasing sliding distance. It was observed that increasing in the applied load as well as TiB2 content there was a decrease in the coefficient of friction for both the alloy and composites. It was also observed that this decrease in coefficient of friction was more for higher 10% TiB2 content.

With the technology scaling there is a decrease in transistor size and increase in number of the transistors per a chip. It causes tremendous increase in complexity and the power dissipation of circuits. This paper mainly focuses on reduction of leakage power dissipation in SRAM 9T cells by employing multi threshold self controllable voltage level circuits  (LSVL & USVL). The Simulation results show that with the employment of MT-SVL technique, leakage power is being reduced compared to the improved SVL technique. The overall simulation is done with CMOS 180nm technology, using the tool of Cadence Virtuoso.