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Porous structures of synthetic active carbons were characterized using nitrogen adsorption at 77 K over a wide range of relative pressures (10 -7 -0.995), and it was shown that the analysis of adsorption potential distributions (APDs) in many cases allows for estimation of the specific surface area and the average micropore size. The APDs for most of the samples had two peaks, which can be related to the monolayer formation on the micropore surface and to the secondary micropore filling. The minimum between these two peaks was identified as a point of completion of the monolayer, allowing for evaluation of the specific surface area in a good agreement with the calculations made using the advanced DFT Plus software. Assuming the slitlike pore geometry, the obtained specific surface areas were used to calculate average micropore sizes for the synthetic active carbons as well as for commercial high-surface-area porous carbons. The amounts adsorbed per unit surface area (normalized adsorption curves) were calculated for these samples and showed a systematic change with the average micropore size. As the latter increased, the normalized adsorption at low pressures (below ca. 10 -3 ) gradually decreased and for samples with larger micropores it became more and more similar to the normalized adsorption on a macroporous nongraphitized carbon. In addition, a gradual development of the secondary micropore filling was observed. The position of peaks on APDs was related to the average micropore size providing another simple method of micropore size estimation. The observed changes in the low-pressure adsorption behavior correlate well with those predicted by computer simulations and DFT calculations, but the experimentally observed monolayerformation and secondary-micropore-filling transitions were smoothed, which can be attributed to the surface and pore-size heterogeneity.

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We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.

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