The spatially dependent de-excitation of a beam of metastable argon atoms, traveling through an optical standing wave, produced a periodic array of localized metastable atoms with position and momentum spreads approaching the limit stated by the Heisenberg uncertainty principle. Silicon and silicon dioxide substrates placed in the path of the atom beam were patterned by the metastable atoms. The de-excitation of metastable atoms upon collision with the surface promoted the deposition of a carbonaceous film from a vapor-phase hydrocarbon precursor. The resulting patterns were imaged both directly and after chemical etching. Thus, quantum-mechanical steady-state atom distributions can be used for sub-0.1-micrometer lithography.

Micro-electromagnets for atom manipulation have been constructed, including magnetic mirrors (serpentine patterns) and traps (circular patterns). They consist of planar micron-scale Au wires on sapphire substrates fabricated using lithography and electroplating. At liquid nitrogen or helium temperatures in vacuum the wires support currents of several amperes with current density ∼108 A/cm2 and power dissipation ∼10 kW/cm2, and they produce magnetic fields to 0.3 T and gradients to 103 T/cm. The micro-electromagnet mirror was used to deflect a beam of metastable helium atoms at grazing angles ∼0.5 mrad.

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This letter describes the fabrication of ∼80 nm structures in silicon, silicon dioxide, and gold substrates by exposing the substrates to a beam of metastable argon atoms in the presence of dilute vapors of trimethylpentaphenyltrisiloxane, the dominant constituent of diffusion pump oil used in these experiments. The atoms release their internal energy upon contacting the siloxanes physisorbed on the surface of the substrate, and this release causes the formation of a carbon-based resist. The atomic beam was patterned by a silicon nitride membrane, and the pattern formed in the resist material was transferred to the substrates by chemical etching. Simultaneous exposure of large areas (44 cm2) was also demonstrated.

This letter describes the formation of nanometer-scale features in a silicon substrate using a self-assembled monolayer ͑SAM͒ of octylsiloxane on silicon dioxide as a resist sensitive to a patterned beam of neutral cesium atoms. The mask that patterned the atomic beam was a silicon nitride membrane perforated with nm and m scale holes, in contact with the substrate surface. In a two-step wet-chemical etching process, the pattern formed in the SAM was transferred first into the SiO 2 layer and then into an underlying silicon substrate. This process demonstrated the formation of silicon features with diameter ϳ60 nm.