Photoluminescent and gas-sensing properties of ZnO nanowires prepared by an ionic liquid assisted vapor transfer approach

We have fabricated MOS memory devices based on coil–rod–coil triblock molecules acting as quantum dots. Uniform molecular dots result in a discrete shift in the threshold voltage at room temperature, which is indicative of single-electron effects. Molecular scalability and low-power operation make the silicon-molecular hybrid device an attractive candidate for next-generation electronic devices.