ZnO thin films prepared using zinc chloride, zinc acetate and zinc nitrate precursors have been successfully synthesized by Spray Pyrolysis method. Films depositions were carried out on glass substrates at 350◦C. Structural properties of ZnO films were investigated by X-ray diffraction (XRD), confirming that all precursors have an Hexagonal Wurtzite structure. The obtained films were oriented along the preferential (002) crystallographic plane. The phase purity was also confirmed by X-ray photoelectron spectroscopy (XPS), Ultra Violet-Visible, and Energy Dispersive X-ray spectroscopy measurements (EDX). The optical measurement revealed that films have average transmittance of 58%, 78% and 65% for zinc chloride, zinc acetate and zinc nitrate, respectively. The band gap values obtained are 3.19, 3.17 and 3.23 eV for ZnO films using zinc acetate, zinc chloride and zinc nitrate precursors, respectively. Additionally, the refractive index and extinction coefficient of the ZnO films for all precursors have been explored.

TM (TM = Sn, Al) doped and co-doped CdO thin films were deposited by spray pyrolysis technique on glass substrate at temperature 350 ˚C. The effect of TM doping and co-doping on the structural, morphological, optical, and electrical properties of CdO thin films was investigated. The obtained films are crystallized in the cubic structure and oriented along the preferential (111) crystallographic plane. The average optical transmittance reaches 79% in the visible range for Sn doped CdO films and 74% for Al-Sn co-doped films. The gap values of the obtained samples are between 2.29 and 2.49 eV. All the deposited films exhibit n-type conductivity with a low electrical resistivity of 7.85.10-4 Ω.cm obtained for Al doped CdO films.

In the present study, the effect of Al doping with 0.5 % Al (AZO-0.50), 1 % Al (AZO-1.00), and 1.5 % Al (AZO-1.50) have been successfully synthesized by Spray Pyrolysis method. The structural, optical and electrical properties of the obtained films was studied. The obtained films are characterized by different techniques such as X-ray diffraction (XRD), UV-visible and electrical Hall Effect measurements. The X-ray diffraction confirmed that the Al doping did not change the ZnO Hexagonal Wurtzite structure. Spectroscopic measurements in the UV-VIS-IR wavelength range were found to give good average transmittance values of about 73%, with a high transmittance of 75% with 0.5% Al doping. The optical gap value increases in the range of 3.23 to 3.26 eV with increasing aluminium content. The electrical analysis shows that the conductivity improved with doping compared to the pure ZnO film