This paper presents a low-voltage high-gain wideband three-stage true-class-AB amplifier. This is realized in the 0.18 μm CMOS process. The three-stage class-AB amplifier is proposed based on a compensation topology called nested Miller compensation along with a memristor to get pole-zero cancellation, which arises beyond the unity gain frequency. The circuit is implemented without the need for extra components as transistors, resistors, and capacitors, thus saving the complexity of the circuit and power consumption. The circuit is designed to operate with a supply voltage of ±1 V along with a bias current of 175 μA. The simulation results indicate that this proposed amplifier is capable of driving wide range of resistive and capacitive loads, furthermore capable of maintaining a phase margin of more than 60°. The total compensation capacitor is 2 pF, which is much lesser as compared to pseudo- and true-class AB amplifier, which implies a reduction in area. Simulation results show that the unity gain frequency of the proposed class-AB amplifier is 136.7 MHz, which is much higher as compared to the counterpart topologies. The major advantage associated with this work is a very high bandwidth attained without affecting the gain of the amplifier.

Memristor technology has grown at a breakneck pace over the last decade, with the promise to transform data processing and storage. A memristor is a non-linear electrical component with two terminals that connects electric charge and magnetic flux. The ability to store and process data in the same physical location is a fundamental benefit of memristors over traditional electrical components. It has a unique feature in that its resistance may be preset (resistor function) and then saved (memory function). Memristors, unlike other types of memory used in modern electronics, are stable and retain their state even if the device is turned off. In this work, a new highly accurate asymmetrical memristor is proposed for highly efficient analog applications. The proposed work used 5 Complementary metal-oxide-semiconductor (CMOS) devices in a parallel and series-connected manner. A bypass transistor is used to control the current flow between two terminals to perform a stable operation. A differential amplifier circuit is used to validate the proposed memristor performance. The proposed work is implemented using TSMC 45nm CMOS technology. This application consumes less power and has good performance when compared with conventional techniques. In this work, a 1V power supply occupies a 67.5 µm2 layout area. The experimental results are improved when compared with the existing circuit.