We identify a quantum well internal high density Augerlike loss process as the origin of the so called ‘droop’ of internal quantum efficiency (IQE) in InGaN based light emitters. The IQE of such a device peaks at small current densities and then monotonously decreases towards higher currents. The origin of this ‘droop’ has been widely discussed recently and many possible mechanisms have been proposed for explaining the effect. We compare temperature and carrier density dependent electroluminescence and photoluminescence measurements of a green emitting single quantum‐well (SQW) LED over a wide parameter range. The carrier‐density as well as temperature dependence of efficiency is identical in both measurements, indicating that the decrease is due to a high density quantum‐well internal loss process. The data can be accurately modeled assuming an Auger‐like loss process with C = 3.5 × 10–31 cm6s–1. We suggest phonon‐ or defect‐assisted Auger recombination as the origin of this loss‐channel. The high current performance can be improved if a thick InGaN SQW or a multi quantum‐well (MQW) is used. This is in very good agreement with theoretical simulations (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.

Degradation mechanism beyond device self-heating in high power light-emitting diodes J. Appl. Phys. 109, 094509 (2011); 10.1063/1.3580264Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Classic electrical Hall effect measurements are standard for electrical characterization of free charge carriers in semiconductor layer structures. We demonstrate that magnetooptic generalized ellipsometry at long wavelengths when applied to conducting or semiconducting multilayer or nanoscopically in‐homogeneous structures can yield equivalent and even much increased information. We term this new method optical Hall effect, because it finds simple explanation within the model described by E. H. Hall for the occurrence of the transverse and longitudinal voltages augmented by non‐locality of the charge response in time. Transverse and longitudinal birefringence cause magnificent anisotropic polarization responses unraveling rich information on free charge properties of complex‐structured samples due to external magnetic fields and collective movement of bound and unbound charge carriers. We demonstrate that with our technique density, type, mobility, effective mass including anisotropy can be measured without any electrical contact in buried structures, and which may have been inaccessible to any true electrical evaluation thus far. We predict a realm of applications for the optical Hall effect in future materials research and engineering. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)