The temperature dependence of the half linewidth and frequency shift of Raman lines in cuprous halides are investigated in the temperature range from 4.2 to 300 K. As for the LO and TO mode of CuI and CuBr, and the LO mode of CuCI, the experimental linewidth and frequency shift are in good agreement with the theoretical ones which have been calculated in terms of three-phonon interaction. I n order to explain the temperature dependence of a strong combination mode in conjunction with the TO phonons of CuCI, the hybridization theory proposed by Ruvalds and Zawadowski is employed in which hybridization between a two-phonon and a single phonon state is postulated. A numerical analysis is made assum-

No abstract

No abstract

Low‐temperature and high‐rate depositions of hydrogenated microcrystalline silicon (μc ‐Si:H) films are investigated using stable plasma excited at atmospheric pressure (AP) by supplying 150‐MHz very high‐frequency (VHF) power. VHF power density, H2/SiH4 ratio and plasma gap are varied as parameters under a fixed substrate temperature (Tsub) of 220 ΩC. Increasing VHF power density and H2/SiH4 ratio is primarily important for the sufficient decomposition of source gas molecules, improving both deposition rate and film property. In addition, the plasma gap is found to be another crucial parameter in the deposition process using AP‐VHF plasma. Numerical analyses on the temperature distribution around the plasma region have revealed that the steady‐state surface temperature of the glass substrate becomes approximately 100 ΩC higher than the back surface temperature (Tsub), which is caused by the moderate surface heating effect of the AP‐VHF plasma. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)