Observing and characterizing the spin distributions on a nanometer scale are of vital importance for understanding nanomagnetism and its application to spintronics. The magnetic structure in MnSi thin samples prepared from a bulk, which undergoes a transition from a helix to a skyrmion lattice, was investigated by in situ observation using Lorentz microscopy. Stripe domains were observed at zero applied field below 22.5 K. A skyrmion lattice with 6-fold symmetry in real space appeared when a field of 0.18 T was applied normal to the film plane. The lattice constant was estimated to be 18 nm, almost identical to the helical period. In comparison with the marginally stable skyrmion phase in a bulk sample, the skyrmion phase was stable over a wide range of temperatures and magnetic fields in the thin samples.

Sensitization of a wide-gap oxide semiconductor with a visible-light-absorbing dye has been studied for decades as a means of producing H2 from water. However, efficient overall water splitting using a dye-sensitized oxide photocatalyst has remained an unmet challenge. Here we demonstrate visible-light-driven overall water splitting into H2 and O2 using HCa2Nb3O10 nanosheets sensitized by a Ru­(II) tris-diimine type photosensitizer, in combination with a WO3-based water oxidation photocatalyst and a triiodide/iodide redox couple. With the use of Pt-intercalated HCa2Nb3O10 nanosheets further modified with amorphous Al2O3 clusters as the H2 evolution component, the dye-based turnover number and frequency for H2 evolution reached 4580 and 1960 h–1, respectively. The apparent quantum yield for overall water splitting using 420 nm light was 2.4%, by far the highest among dye-sensitized overall water splitting systems reported to date. The present work clearly shows that a carefully designed dye/oxide hybrid has great potential for photocatalytic H2 production, and represents a significant leap forward in the development of solar-driven water splitting systems.

The lossless current-carrying capacity of a superconductor is limited by its critical current density (Jc). A key to enhance Jc towards real-life applications is engineering defect structures to optimize the pinning landscape. For iron-based superconductors (IBSs) considered as candidate materials for high-field applications, high Jc values have been achieved by various techniques to introduce artificial pinning centres. Here we report extraordinary vortex pinning properties in CaKFe4As4 (CaK1144) arising from the inherent defect structure. Scanning transmission electron microscopy revealed the existence of nanoscale intergrowths of the CaFe2As2 phase, which is unique to CaK1144 formed as a line compound. The Jc properties in CaK1144 are found to be distinct from other IBSs characterized by a significant anisotropy with respect to the magnetic field orientation as well as a remarkable pinning mechanism significantly enhanced with increasing temperature. We propose a comprehensive explanation of the Jc properties based on the unique intergrowths acting as pinning centres.

Annular dark-field (ADF) imaging by scanning transmission electron microscopy (STEM) is a common technique for material characterization with high spatial resolution. It has been reported that ADF signal is proportional to the nth power of the atomic number Z, i.e., the Z contrast in textbooks and papers. Here we first demonstrate the deviation from the power-law model by quantitative experiments of a few 2D materials (graphene, MoS2 and WS2 monolayers). Then we elucidate ADF signal of single atoms using simulations to clarify the cause of the deviation. Two major causes of the deviation from the power-law model will be pointed out. The present study provides a practical guideline for the usage of the conventional power-law model for ADF imaging.

We propose the use of indium tungsten oxide (IWO) as a channel material for thin-film transistors (TFTs). In the present study, an IWO film was deposited at room temperature by means of DC magnetron sputtering and then annealed at 100 °C in N2 prior to formation of Au source and drain electrodes. Analysis using X-ray diffraction and transmission electron microscopy revealed that the film remained amorphous even after the post-deposition annealing treatment. TFTs fabricated using a Si substrate as a back-gate electrode showed good performance, with a saturation field-effect mobility of 19.3 cm2 · V−1 · s−1, an on/off current ratio of 8.9 × 109.