While there is a decline in the annual population of Taiwan, the number of crams schools in the supplementary education industry is increasing. A concern is that there are not enough students to go around. Cram schools are facing a difficult situation to survive in the industry. Therefore, a great and useful leadership method is needed to help leaders lead their faculty members and organizations so that they can survive and even grow in this white-hot industry. In this study, 400 New Taipei City cram school faculties were invited to be the research objects to study the influences of transformational leadership, transactional leadership, and patriarchal leadership on job satisfaction. This study adopted the method of intentional sampling to conduct a questionnaire survey. After collecting data, SPSS12.0 software was used to analyze the descriptive statistics, reliability analysis, description of statistics, t-test method of single factor analysis of variance, and regression. As a result of this research, the employees under transformational leadership have a larger positive result on outer job satisfaction while patriarchal leadership has positive influences on inner job satisfaction. Encouraging subordinates with positive responses, inspiring speeches, and compliments could make subordinates satisfied with the company and interaction with colleagues, while teaching subordinates behavior sets up a moral and authorized style and controlling the organization directly could let subordinates get a sense of accomplishment from work. This study is aimed to provide suggestions and references for the cram schools’ leaders to change their leadership styles and improve their employees’ job satisfaction. Cram schools that take the suggestions and references could improve their working environment and become more competitive in the education industry.

Resistive random access memory (RRAM) devices with analog resistive switching are expected to be beneficial for neuromorphic applications, and consecutive voltage sweeps or pulses can be applied to change the device conductance and behave synaptic characteristics. In this paper, RRAM devices with a reverse stacking order of 6-nm-thick HfO x and 2-nm-thick AlO x dielectric films were fabricated. The device with TiN/Ti/AlO x /HfO x /TiN stacked layers exhibited digital resistive switching, while the other device with TiN/Ti/HfO x /AlO x /TiN stacked layers could demonstrate synaptic characteristics that were analog set and reset processes under consecutive positive and negative voltage sweeps or a train of potentiation and depression pulses. Moreover, this device could also implement synaptic learning rules, spike-timing-dependent plasticity (STDP). Varying temperature measurements and linear fittings of the measured data were conducted to analyze current conduction mechanisms. As a result, the variation of resistive switching behavior between these two devices is attributed to the varying effectiveness of the oxygen scavenging ability of the Ti layer when put into contact with either AlO x or HfO x . Moreover, AlO x functioned as a diffusion limiting layer (DLL) in the device with TiN/Ti/HfO x /AlO x /TiN stacked layers, and gradual modulation of the production and annihilation of oxygen vacancies is the cause of synaptic characteristics.INDEX TERMS Resistive random access memory (RRAM), bilayered dielectric films, synaptic characteristics, diffusion limiting layer (DLL), conductive filament (CF), spike-timing-dependent plasticity (STDP).

Manufacturing industries are gradually changing to green production due to the increasing production cost. Reducing tool wear in production can not only decrease production cost but also the effect the environment. Thus, it becomes a crucial issue for the machining industry. This study investigates the optimal machining parameters for the computer numerical controlled turning process of S45C steel in minimizing tool wear. The correlation between control parameters (speed, cutting depth, and feed rate) and production quality were constructed by using semantic rules and fuzzy quantification. The Taguchi method was additionally employed to determine the optimal turning parameters. Under the consideration of environmental protection and tool cost, the optimal machining parameters were furthermore derived from the fuzzy semantic rules. The practicability of the optimal parameters was moreover verified through turning experiments. It is found that the proposed method in this study is appropriate and applicable to universal applications.

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Post-metal annealing (PMA) has been adopted to reduce the operation voltages of HfOx-based resistive random access memory (RRAM) devices, especially the forming voltage (VForming). TiN/Ti/HfOx/TiN stack structures were fabricated and annealed via rapid thermal annealing (RTA) and furnace annealing (FA) to investigate the annealing effects. The result of X-ray photoelectron spectroscopy (XPS) analysis indicates that the distribution of oxygen towards the interposing Ti layer increases after the annealing process, which facilitates the formation of conductive filaments in the dielectric layer. As a result, VForming can be decreased from 4.60 to 3.24 and 3.36 V via RTA for 30 s at 400 °C and via FA for 60 min at 300 °C, respectively, as compared with that without PMA. However, the VForming of the device annealed via FA for 60 min at 400 °C was higher than that at 300 °C. This turn-around phenomenon of the forming voltages of RRAM devices annealed via FA was found. It was attributed to the conversion of the interposing Ti layer into a highly resistive TiO2 film.