We review ionizing radiation effects in Flash memories, the current dominant technology in the commercial non-volatile memory market. A comprehensive discussion of total dose and single event effects results is presented, concerning both floating gate cells and peripheral circuitry. The latest developments, including new findings on the mechanism underlying upsets due to heavy ions and destructive events, are illustrated

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We report on new results of TID tests on an advanced 8-Gbit NAND-Flash memory. Data error percentage and standby current depend strongly on operational mode. Preventive memory refresh is proposed to move the first error occurrence to significant higher dose values. The count of erase cycles until wear out is not affected by the accumulated dose.

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