Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

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Amorphous silicon nitride deposited by hot-wire chemical vapor deposition b-SiC thin films were synthesized directly on graphite by hot filament chemical vapor deposition at low temperature. SiH 4 diluted in hydrogen was employed as the silicon source, while graphite was functioned as both substrate and carbon source for the as-grown b-SiC films. X-ray diffraction and Fourier transform infrared analysis indicate that SiO 2 /b-SiC/graphite hybrid composite was formed after post annealing treatment, and its crystalline quality can be remarkably improved under optimized annealing conditions. The possible growth mechanism was proposed based on in situ etching of graphite by reactive hydrogen radicals at the atomic level. V C 2013 AIP Publishing LLC.