This paper presents the fabrication of a laminated-suspension microwave switch using a conventional 0.6 µm single polysilicon three metals complementary metal-oxide semiconductor process. The post-processing is completed with maskless dry etching. The micromachined microwave switch consists of two electrostatic parallelogram actuators, two T-type connectors and one coplanar waveguide on a p-type silicon substrate. The switch only requires a low dc voltage of around 18 V for electrostatic traction. The testing results of the microwave switch show that the insertion loss is 6.8 dB and isolation is −7.8 dB in the range 10-20 GHz. In addition to demonstrating the design and fabrication of the microwave switch, this paper summarizes the experimental results.

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In this paper, two different post CMOS fabrication process designs which were also novel differential hot wire anemometers (usually named it as flow sensors) similar to Honeywell flow sensor structure are presented. Additionally, other two new types of anemometer structure compatible with standard CMOS process were also demonstrated in this paper. Our fabrication strategy to the anemometer was based on 0.35 m standard CMOS processes and fabricated this anemometer with IC integration, low cost, less time to market and high performance characteristics. A successful post CMOS processes designed to fabricate these micro anemometers had been demonstrated. Besides, the characteristics of the anemometer which indicates a good linearity output in the flow measuring range from 0 to 12 Liter / min and a sensitivity of this micro anemometer near 1 cm lmin was measured.INTRODUCTION:

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