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SnTe is receiving a lot of attention as a topological crystalline insulator. Herein, SnTe films are grown directly on GaAs (100) substrates by molecular beam epitaxy. The surface morphology and electronic properties are measured by atomic force microscopy and Hall effect measurement, respectively. Considering previous X‐ray diffraction results, the samples grown with high beam‐intensity ratios show hexagonal Te segregation in the films, which deteriorates the surface morphology and decreases the conductivity. By suppressing the supply of Te, better surface morphology and electrical properties are obtained.

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