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Objective. Ensuring the longevity of implantable devices is critical for their clinical usefulness. This is commonly achieved by hermetically sealing the sensitive electronics in a water impermeable housing, however, this method limits miniaturisation. Alternatively, silicone encapsulation has demonstrated long-term protection of implanted thick-film electronic devices. However, much of the current conformal packaging research is focused on more rigid coatings, such as parylene, liquid crystal polymers and novel inorganic layers. Here, we consider the potential of silicone to protect implants using thin-film technology with features 33 times smaller than thick-film counterparts. Approach. Aluminium interdigitated comb structures under plasma-enhanced chemical vapour deposited passivation (SiO x , SiO x N y , SiO x N y + SiC) were encapsulated in medical grade silicones, with a total of six passivation/silicone combinations. Samples were aged in phosphate-buffered saline at 67 ∘ C for up to 694 days under a continuous ±5 V biphasic waveform. Periodic electrochemical impedance spectroscopy measurements monitored for leakage currents and degradation of the metal traces. Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, focused-ion-beam and scanning-electron- microscopy were employed to determine any encapsulation material changes. Main results. No silicone delamination, passivation dissolution, or metal corrosion was observed during ageing. Impedances greater than 100 GΩ were maintained between the aluminium tracks for silicone encapsulation over SiO x N y and SiC passivations. For these samples the only observed failure mode was open-circuit wire bonds. In contrast, progressive hydration of the SiO x caused its resistance to decrease by an order of magnitude. Significance. These results demonstrate silicone encapsulation offers excellent protection to thin-film conducting tracks when combined with appropriate inorganic thin films. This conclusion corresponds to previous reliability studies of silicone encapsulation in aqueous environments, but with a larger sample size. Therefore, we believe silicone encapsulation to be a realistic means of providing long-term protection for the circuits of implanted electronic medical devices.

Platinum is widely used as the electrode material for implantable devices. Owing to its high biostability and corrosion resistivity, platinum could also be used as the main metallization for tracks in active implants. Towards this goal, in this work we investigate the stability of parylene-coated Pt tracks using passive and active tests. The test samples in this study are Pt-on-SiO2 interdigitated comb structures. During testing all samples were immersed in saline for 150 days; for passive testing, the samples were left unbiased, whilst for active testing, samples were exposed to two different stress signals: a 5 V DC and a 5 Vp 500 pulses per second biphasic signal. All samples were monitored over time using impedance spectroscopy combined with optical inspection. After the first two weeks of immersion, delamination spots were observed on the Pt tracks for both passive and actively tested samples. Despite the delamination spots, the unbiased samples maintained high impedances until the end of the study. For the actively stressed samples, two different failure mechanisms were observed which were signal related. DC stressed samples showed severe parylene cracking mainly due to the electrolysis of the condensed water. Biphasically stressed samples showed gradual Pt dissolution and migration. These results contribute to a better understanding of the failure mechanisms of Pt tracks in active implants and suggest that new testing paradigms may be necessary to fully assess the long-term reliability of these devices.

A half-rate low-power 3-tap decision feedback equalizer (DFE) was designed in 90-nm CMOS technology. An improved switched-capacitor-based summer architecture is used in the front-end sample-and-hold to speculate the first feedback tap. Other two taps are canceled using current summation technique. Further power consumption reduction is achieved by using sense-amplifier-based slicer and pass-gate multiplexer instead of CML architecture. An accurate characterization of DFE, based on Least Square Estimation and using random sequence, with certain probabilistic characteristics suitable for intended operating conditions, is described. The Proposed 3-tap DFE consumes 4mW from a 1.2V supply when equalizing 10 Gb/s data passed over a 10" NELCO channel with 15dB of loss at 5GHz.

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