Optical disk interchangeability has been studied by the Japanese Optical Disk Standardization Committee (JODSC).

The diffusion-segregation redistribution of B and P impurities during thermal oxidation of Ge-containing Si has been simulated. In all probability, Ge affects the diffusion of B and P via bulk recombination of self-interstitials (SI) on Ge centres, rather than through a decrease in the rate of surface generation of SI in thermal oxidation. The Ge-induced retardation of the oxidation-enhanced diffusion of B and P in Si and redistribution of the B and P impurities at the SiO 2 /Si interface are described. The parameters of SI bulk recombination on Ge-related centres are found and an increase in the segregation coefficient of B in the SiO 2 -Si system in the presence of Ge is revealed by comparing the calculated and experimental concentration distributions.