No abstract

We demonstrated that p-and n-type activation layers can be formed in Si films by laser doping with H 3 PO 4 solution and Al 2 O 3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10 19 cm −3 in Si films. In addition, generations of the activation carriers for n-and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.INDEX TERMS Low temperature poly Si (LTPS), thin-film-transistor (TFT), excimer laser annealing (ELA), laser doping, chemical solution coating.

No abstract

No abstract

No abstract