A model for a dual‐material‐gate AlGaN/GaN high‐electron‐mobility transistor has been developed by a finite difference method. The method permits the modeling of dual material as two individual single materials by splitting the 2‐D Poisson equation into two separate 1‐D equations. The unified model of two separate 1‐D equations is formed by applying the boundary conditions. The proposed model estimates the surface potential, electric field, threshold voltage, and drain current by considering the work functions of two metal gates, their length difference, and applied drain voltage. The accuracy of the model can be verified using Technology Computer‐Aided Design (TCAD) simulations.

The impact of various geometrical parameters and doping parameters on the performance of GaN/AlGaN quantum dot-based light-emitting diode using 3D numerical simulations have been studied in this work. The parameters are ranked based on their sensitivity coefficients. Four important performance metrics, (i) internal quantum efficiency, (ii) responsivity, (iii) optical gain, and (iv) input power are used for this study. The bottom radius of the quantum dot is found to be the most significant parameter with respect to the internal quantum efficiency and optical gain. Nanocolumn radius is the most significant parameter with respect to Responsivity and input power. The overall ranking suggests that the Nanocolumn radius is the most sensitive parameter.